l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power s.

The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson.

CS55N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitabl.

CS55N10A4

CS55N10A8

CS55N10A8-G

CS55N10AQ3-G

CS55N06A4

CS55N06AQ3-G

CS55N25FA9R

CS55N50

CS55N53

CS5501

CS5503

CS5504

CS5505